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Walter Brattain

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Walter Brattain was born on 10 February 1902 in Amoy (Xiamen), China, to American parents, raised in Washington state, and died on 13 October 1987 in Seattle, Washington. An experimental physicist, he joined Bell Labs in 1929 and by the mid-1940s was working, under William Shockley's direction, alongside the theorist John Bardeen on the surface properties of semiconductors. On 16 December 1947 Brattain and Bardeen built and demonstrated the first working point-contact transistor, a solid-state device that could amplify an electrical signal without the fragility, bulk, or power draw of a vacuum tube. He shared the 1956 Nobel Prize in Physics with Bardeen and Shockley for the discovery.

Facts
Birth Year
1902 1
Death Date
1987-10-13 1
Death Year
1987 1
Field
Experimental physics, particularly semiconductor physics 1
Cross-Tradition Connections

Invented

Transistor, Instruments

Built the first working point-contact transistor with John Bardeen at Bell Laboratories, tested on 16 December 1947.

Member Of

Bell Labs, Institutions

Brattain worked at Bell Labs from 1929, co-inventing the point-contact transistor there with John Bardeen in December 1947.

Works In

In the Other Atlases
Sources
1. Walter Brattain (Britannica)
Encyclopaedia BritannicaView the Source
John Bardeen (Britannica)
Encyclopaedia BritannicaInvented: TransistorView the Source
Condensed Matter Physics (Wikipedia)
WikipediaWorks In: Solid-State PhysicsView the Source
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